| Application Number: | 200610100509.9 | Application date: | 2006.06.30 |
| name: | Laminated photovoltaic device | ||
| Public (announcement) number: | CN1893120 | Public (announcement) day: | 2007.01.10 |
| Main classification number: | H01L31/04(2006.01)I | The original application number of the division: | |
| Classification number: | H01L31/04(2006.01)I; H01L31/042(2006.01)I; H01L31/075(2006.01)I | ||
| Award day: | priority: | 2005.6.30 JP 2005-190930 | |
| Application (patent) person: | Sanyo Electric Co., Ltd. | ||
| address: | Osaka, Japan | ||
| Invention (design) person: | Island Masaki | International application: | |
| International announcement: | Enter country date: | ||
| Patent agency: | Beijing Jikai Intellectual Property Agency Co., Ltd. | agent: | Long Yu |
In the photovoltaic device of the present invention, a photoelectromotive force element having an amorphous silicon layer (8) as a photoelectric conversion layer is disposed on a light incident side, and a light having a microcrystalline silicon layer (5) as a photoelectric conversion layer is disposed on a rear side thereof. An electromotive force component characterized in that a peak area of ​​a Si-H tensile mode obtained by measuring an amorphous silicon layer (8) and a microcrystalline silicon layer (5) as a photoelectric conversion layer by infrared absorption spectroscopy is set to I [Si-H], set the peak area of ​​the Si-O stretching mode to I[Si-O], and set their ratio to α(=I[[Si-O]/I[Si-H] When the α2 of the microcrystalline silicon layer (5) as the photoelectric conversion layer of the second photoelectromotive force component is larger than α1 of the amorphous silicon layer (8) as the photoelectric conversion layer of the front photoelectromotive force component, and the second light The short-circuit current Isc2 of the electromotive force component is greater than the short-circuit current Isc1 of the front photoelectromotive force component.
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