| Application Number: | 200610154424.9 | Application date: | 2006.10.31 |
| name: | Method for depositing hydrogenated amorphous silicon carbon alloy film on glass substrate | ||
| Public (announcement) number: | CN1944308 | Public (announcement) day: | 2007.04.11 |
| Main classification number: | C03C17/09(2006.01)I | The original application number of the division: | |
| Classification number: | C03C17/09(2006.01)I | ||
| Award day: | priority: | ||
| Application (patent) person: | Zhejiang University | ||
| address: | No. 38, Zheda Road, Xihu District, Hangzhou, Zhejiang, China | ||
| Invention (design) person: | Du Yiyi; Zhang Yiying; Weng Wenjian; Han Gaorong; Zhao Gaoling; Wang Jianxun; Song Chenlu; Shen Ge; Xu Gang; Zhang Xiwen | International application: | |
| International announcement: | Enter country date: | ||
| Patent agency: | Hangzhou Qiushi Patent Office Co., Ltd. | agent: | Han Jiemei |
The method for depositing a hydrogenated amorphous silicon carbon alloy thin film on a glass substrate disclosed in the invention adopts a radio frequency inductively coupled plasma enhanced chemical vapor deposition method, and the steps are as follows: the glass substrate is washed and placed in a reaction chamber, and the reaction chamber is evacuated. And heating the substrate, the HH diluted SiH4 and CH4 gases are used as the reaction gas source, the CH4/(CH4+SiH4) molar ratio is 0~1, and the two gas sources are mixed into the reaction chamber after being mixed in the buffer chamber, and the radio frequency glow discharge is performed. A hydrogenated amorphous silicon carbon alloy film is deposited on the substrate. The preparation method of the invention is simple, and the obtained hydrogenated amorphous silicon carbon alloy film has high Si-C bond content, good film uniformity, optical band gap is basically stable at about 2.5 eV, and electrical conductivity is high. Hydrogenated amorphous silicon carbon alloy thin films deposited on glass substrates are widely used in electronic devices of active matrix liquid crystal displays, solar cells, phototransistors, light emitting diodes, sensors, and the like.
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