| Application Number: | 200510111017.5 | Application date: | 2005.12.01 |
| name: | Tin dioxide film and silicon heterojunction solar cell | ||
| Public (announcement) number: | CN1812136 | Public (announcement) day: | 2006.08.02 |
| Main classification number: | H01L31/042 (2006.01)I | The original application number of the division: | |
| Classification number: | H01L31/042 (2006.01) I; H01L31/072 (2006.01) I | ||
| Award day: | priority: | ||
| Application (patent) person: | Shanghai Jiaotong University | ||
| address: | No. 800 Dongchuan Road, Minhang District, Shanghai, China, 200240 | ||
| Invention (design) person: | Zhou Zhibin; Li Youjie | International application: | |
| International announcement: | Enter country date: | ||
| Patent agency: | Shanghai Jiaoda Patent Office | agent: | Wang Xilin; Wang Guizhong |
A tin dioxide film and a silicon heterojunction solar cell in the field of semiconductor technology. The invention comprises: a battery facing surface gate electrode, a fluorine-doped tin dioxide layer, a silicon dioxide layer, an n-type silicon substrate, an intrinsic amorphous silicon film, a phosphorus-doped amorphous silicon film, and an aluminum back electrode. The surface of the n-type silicon substrate is sandwiched between a fluorine-doped tin dioxide layer and a front surface of the n-type silicon substrate. An intrinsic amorphous silicon film and a phosphorus-doped amorphous silicon film and an aluminum back electrode are deposited. The invention reduces the series resistance of the film, and the intrinsic amorphous silicon film, the phosphorus-doped amorphous silicon film on the back surface and the silicon wafer form a high and low junction, which improves the electric output performance of the battery, has simple process and low industrialization cost. At AM1.5, 100mW/cm2 standard light intensity, the efficiency of solar cells is more than 13%.
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